ABB FI840F Fieldbus Module

ABB FI840F Fieldbus Module

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In practice, this peak current will not be reached, because it is limited by stray inductances and non-ideal switching transitions of a real gate driving circuit. The datasheet value given for the internal gate resistor has to be understood as a single resistance and may result from paralleled resistors inside the IGBT module as illustrated in Figure 18. 

This usually counts for larger modules only, especially medium- and high-power types. These internal resistors lead to improved internal current sharing. The internal resistance should be considered as one part of total gate resistor to calculate the peak current capability of a driver. The designer can use the external gate resistor to influence the switching performance of the IGBT. 

Minimum RGon is limited by turn-on di/dt, minimum RGoff is limited by turn-off dV/dt. Too small gate resistors can cause oscillations and may lead to damage the IGBT or diode. The minimum recommended external gate resistor RGext is given in the switching losses test conditions as mentioned in Figure 19. The allowed external gate resistor values are shown in the switching loss diagram of Figure 24b.

ABB FI840F (3AUA0000061302) Technical drawing:

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