ABB PM-803F Base Unit CPU Main Board

ABB PM-803F Base Unit CPU Main Board

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The dynamic characteristics of an IGBT are influenced by several parasitic capacitances. These are inherent parts of the die’s internal structure as represented in Figure 12a. A simplified schematic is shown in Figure 12b. The input capacitance Cies and the reverse transfer capacitance Cres are the basis for an adequate dimensioning of the gate driver circuit. The output capacitance Coss limits the dV/dt at switching transitions. Losses related to Coss can usually be neglected.  

The values of the parasitic capacitances strongly depend on the operating point of the IGBT. To measure these capacitances with gate- or collector-emitter voltages applied, dedicated measurement circuits according to IEC60747-8 have to be utilized.

ABB PM-803F Technical drawing:

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