ABB TB845 Redundant ModuleBus Cable Adaptor

ABB TB845 Redundant ModuleBus Cable Adaptor

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Cables

In contrast to the MOSFET, that has an on resistance as a dominant parameter, the IGBT has a forward voltage drop. As a result, at very low load, indicated with 1 in Figure 9b, the MOSFET always has lower conduction losses than an IGBT. Both output characteristics depend on the junction temperature. 

The Rds(on) of a MOSFET typically increases by a factor of about two, when the junction temperature increases from 25°C to 150°C. The temperature coefficient of an IGBT’s forward voltage is much lower. At low load, the conduction losses even decrease with increasing temperature, due to the lower voltage drop at the pn-junction as represented in Figure 9b. 

At higher currents, the increase of the ohmic resistance is dominant. Due to this, a parallel connection of several IGBTs is possible and is commonly required for high current IGBT power modules. 

ABB TB845 Technical drawing:

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