ABB TU846 Module Termination Unit

ABB TU846 Module Termination Unit

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This data can be used to calculate conduction losses of the IGBT. In order to contribute to a much better understanding of these parameters, the IGBT device structure as well as it’s difference in output characteristic compared to a power MOSFET is discussed briefly. After this, the datasheet parameters of the IGBT module are explained. Figure 9a shows in detail the structure of a trench-field-stop IGBT with a simplified two-transistor equivalent circuit. The emitter-sided pn-junction of the pnp-transistor resembles the IGBT’s collector side. Like a diode it leads to a characteristic voltage drop when the IGBT is conducting current. 

The intrinsic bipolar transistor of the IGBT is driven by a MOSFET. Therefore, the gate driving characteristic is quite similar to a power MOSFET. The output characteristic is different, which is illustrated in Figure 9b schematically. It shows the characteristic of turned-on devices at two different junction temperatures. 

The MOSFET as shown in Figure 9b is reverse conducting for negative drain-source voltages due to its intrinsic body diode. The IGBT has no body diode and thus an anti-parallel diode has to be used, when this operating mode is required. The advantage is, that the external diode can be optimized independently to suit the IGBT’s switching characteristics.

ABB TU846 Technical drawing:

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